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Mobile XDR™ DRAM
Rambus' Mobile XDR™ DRAM is a fully-differential, low-power, high-performance memory optimized for mobile applications with high-bandwidth and low-power requirements. The Mobile XDR DRAM is capable of 4.3Gbps data rates and up to 17GB/s of bandwidth from a single 4-byte wide device.
The Mobile XDR DRAM utilizes Very-Low-Swing Differential (VLSD) signaling to communicate with the Mobile XDR IO Controller Cell (MIO). All Data (DQ), Command/Address (C/A), and reference clock signals are VLSD signals and transmit at full speed. This minimizes both power and electromagnetic interference (EMI), enables best-in-class performance and power efficiency, and reduces system shielding requirements.
The Mobile XDR DRAM can support 1, 2, or 4 DQ channels, each with 8-bits, and makes use of a traditional 8-bank CMOS DRAM core. It can support both threaded and non-threaded operation modes. Each device has one or more C/A channels depending upon the width of the device.
The FlexClocking™ Architecture is employed to eliminate the need for a PLL or DLL on the DRAM device interface and to enable Advanced Power State Management (APSM) for optimized power efficiency across a wide range of usage profiles.
