Mobile XDR™ Memory vs. LPDDR2

The Future of Mobile Memory

Mobile XDR™ memory is the latest generation of the award-winning XDR memory architecture. Capable of unprecedented data rates for mobile devices of up to 4.3 Gigabits per second (Gbps) per pin at an unmatched power efficiency 2.2 milliwatts per Gigabit per second (mW/Gbps). This makes Mobile XDR memory the world's fastest and most power-efficient mobile memory solution. It delivers four times the peak bandwidth per device when compared to LPDDR2 DRAM.

High Performance, Low Power

The Mobile XDR memory solution provides excellent bandwidth performance and does so at far lower power than LPDDR2 memory. In fact, Mobile XDR memory consumes 1/3 of the power of an LPDDR2 interface at equivalent memory system bandwidth. This power savings translates to an increase in battery life that provides up to an additional hour of continuous usage time.

Born of the Mobile Memory Initiative

Mobile XDR memory achieves this power and performance leadership through key Rambus innovations, many of which were developed through Rambus' Mobile Memory Initiative. The first to employ Very Low-Swing Differential (VLSD) signaling, Mobile XDR memory has a lower voltage swing versus single-ended signaling architectures such as LPDDR2. Other innovations include the FlexClocking™ architecture, which greatly simplifies the design of the DRAM interface, and Advanced Power State Management (APSM), which provides ultra-fast transition times between various low-power and active operating modes.