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檔名: Modeling and Correlation of Supply Noise for a 3.2GHz Bidirectional Differential Memory Bus
This paper describes the modeling of power supply noise in a high-bandwidth XDR™ DRAM memory system and the correlation with measurement results in time domain while the system is operating. A supply network model is presented that allows prediction of worst-case supply noise outside as well as inside the device packages. Comparison of simulation results with measurements outside the package show excellent correlation, verifying the modeling approach.
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立即下載: designcon2005schmittpaper.pdf
