Designed to meet the memory-intensive workload demands of networking and data center applications, the DDR4 memory PHY delivers maximum performance and power efficiency while maintaining full compatibility with the DDR4 and DDR3 industry standards. With the Rambus DDR4 Controller it comprises a complete DDR4 memory interface subsystem.

How the DDR4 Interface Subsystem works

The Rambus DDR4 memory PHY delivers industry-leading data rates of up to 3200 Mbps and is compatible with the DDR4 and DDR3 standards. The PHY consists of a Command/Address (C/A) macro cell and Data (DQ) macro cells configured to create a 72-bit wide channel.

The Rambus DDR4 controller maximizes memory bus efficiency via Look-Ahead command processing, bank management, auto-precharge and additive latency support. The core is DFI compatible and supports a range of interfaces to user logic.

DDR4 Memory Interface Subsystem
DDR4 Memory Interface Subsystem

The Rambus DDR4 PHY and DDR4 controller used together comprise a complete DDR4 memory interface subsystem. Alternatively, these cores can be licensed separately to be paired with 3rd-party DDR4 controller or PHY solutions.

Solution Offerings

Watch Webinar

Memory Systems for AI and Leading-Edge Applications

Thanks to rapid advancements in computing, neural networks are fueling tremendous growth in AI for a broad spectrum of applications. Learn about the memory architectures, and their relative advantages, at the heart of the AI revolution.

Protocol Compatibility

Protocol Data Rate (Gbps) Application
DDR4 1600-3200 Data Center and Networking
DDR3 (1.5V) 1066-2133 Data Center and Networking
DDR3L (1.35V) 1066-2133 Data Center and Networking
DDR3U (1.25V) 1066-2133 Data Center and Networking


FlexPhase™ Timing Adjustment Circuits

FlexPhase per bit timing adjustment circuits deskew data and clock signals to improve signal integrity and simplify package and PCB system design.

Output Driver Calibration

Output driver calibration allows SoC designers to tune the output signaling to optimal levels in order to improve data rates and system voltage margin.

On Die Termination Calibration

ODT calibration enables higher data rates and superior DRAM device and module performance by establishing the optimal termination value to compensate for variations in process and operating conditions that degrade signal performance.

Rambus logo