How it works
The Rambus DDR3 memory PHY is optimized for consumer applications with reduced system cost, improved performance and faster time-to-market. Fully compatible with DDR3 at 1.5V and DDR3L at 1.35V and scalable to 2133Mbps, the PHY has undergone extensive design-phase modeling and simulation of alternative SOC, package and PCB environments to ease implementation and enable first-time-right designs. In order to deliver improved flexibility of design, the R+ DDR3 PHY supports wire-bond (running up to 1600 Mbps) and flip-chip (running up to 2133 Mbps) packaging options and is compatible with 4- and 6-layer PCB designs. In addition, it features FlexPhase™ circuits that enable Per byte timing adjustment circuits deskew data and clock signals to improve signal integrity and simplify package and PCB system design.
The DDR3 PHY is fully characterized and is available in 28LP process.