Rambus Expands High-Performance Memory Subsystem Offerings with HBM2E Solution on Samsung 14/11nm
Highlights: Supports accelerators requiring terabyte-scale bandwidth for artificial intelligence/machine learning (AI/ML) training applications Fully-integrated HBM2E memory interface subsystem, consisting of verified PHY and controller, silicon proven on advanced Samsung 14/11nm FinFET process Backed by unrivaled system expertise supporting customers with interposer and package reference designs to speed time to market SAN JOSE, Calif. – April 21, 2021 – Rambus Inc. (NASDAQ: RMBS), a provider of industry-leading chips and silicon IP making data faster and safer, today announced the Rambus HBM2E memory interface subsystem, consisting of a fully-integrated PHY and