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Interface IP

DDR3 PHY

The Rambus DDR3 memory PHY is optimized for applications requiring reduced system cost, improved performance and faster time-to-market. With the Northwest Logic DDR3 Controller it comprises a complete DDR3 memory interface subsystem.

How the DDR3 Interface works

The Rambus DDR3 memory PHY is fully compatible with DDR3 at 1.5V and DDR3L at 1.35V and scalable to 2133Mbps. The PHY has undergone extensive design-phase modeling and simulation of alternative SOC, package and PCB environments to ease implementation and enable first-time-right designs.

The Northwest Logic DDR3 controller maximizes memory bus efficiency via Look-Ahead command processing, bank management, auto-precharge and additive latency support. The core is DFI compatible and supports a range of interfaces to user logic.

DDR3 Memory Interface Subsystem
DDR3 Memory Interface Subsystem

The Rambus DDR3 PHY and Northwest Logic DDR3 controller used together comprise a complete DDR3 memory interface subsystem. Alternatively, these cores can be licensed separately to be paired with 3rd-party DDR3 controller or PHY solutions.

Solution Offerings

  • PLL-based clocking with internal clock alignment to the parallel clock on the memory controller interface
  • Autonomous initialization
  • Support for multiple channel configurations from x16 through x72 per channel
  • Support for multiple DRAM widths (x4, x8, x16, x32)
  • Support for single channel, 1 to 4 ranks
  • Excepteur sint occaecat cupidatat non proident,
  • Selectable low-power operating states
  • DFI 3.1 compliant for easy integration with memory controller
  • Programmable output impedance and on-die termination
  • ZQ calibration of output impedance and on-die calibration
  • Utilizes standard 8-layer 6020 metal layer stack.
  • Supports C4 flip-chip packaging options
  • Register interface for state observation
  • Test traffic generation and error checking for in-situ test
  • LabStation™ software environment for system level bring-up, characterization, and validation
  • Fully-characterized hard macro (GDSII):
  • Complete design views:
    • Gate-level and IO models
    • Verification test benches
    • Layout abstracts (.lef)
    • Timing models (.lib)
  • Memory controller reference design
  • Full Documentation
    • Integration Guidelines
    • Package and PCB design guidelines
    • ASIC/DFT manufacturing guidelines
    • Test and Characterization user guide
    • Verilog models
    • CDL netlists *(.cdl)
    • ATPG models
    • GDSII layout
    • DRC & LVS reports

Comprehensive Chip and System Design Reviews

  • Kickoff/Program Review
  • Floor plan Review
  • Test/Characterization Plan Review
  • Package Design Review
  • Board Design Review
  • Final Chip Integration Review
  • Bring-up and Test Review
 

Engineering Design Services:

  • Package design
  • System board layout
  • Statistically-based signal and power integrity analysis
2.5D/3D Packaging Solutions for AI and HPC

Memory Systems for AI and Leading-Edge Applications

Thanks to rapid advancements in computing, neural networks are fueling tremendous growth in AI for a broad spectrum of applications. Learn about the memory architectures, and their relative advantages, at the heart of the AI revolution.

Protocol Compatibility

ProtocolData Rate (Gbps) Application
DDR3 (1.5V)1600-2133IoT, Edge
DDR3L (1.35V)1600-1866IoT, Edge

Inventions

FlexPhase™ Timing Adjustment Circuits

FlexPhase per bit timing adjustment circuits deskew data and clock signals to improve signal integrity and simplify package and PCB system design.

Output Driver Calibration

Output driver calibration allows SoC designers to tune the output signaling to optimal levels in order to improve data rates and system voltage margin.

On Die Termination Calibration

ODT calibration enables higher data rates and superior DRAM device and module performance by establishing the optimal termination value to compensate for variations in process and operating conditions that degrade signal performance.

Don’t miss out on the Rambus Design Summit on October 8th!