At Rambus, we create cutting-edge semiconductor and IP products, spanning memory and interfaces to security, smart sensors and lighting.
The Rambus DDR3 memory PHY is fully compatible with DDR3 at 1.5V and DDR3L at 1.35V and scalable to 2133Mbps. The PHY has undergone extensive design-phase modeling and simulation of alternative SOC, package and PCB environments to ease implementation and enable first-time-right designs.
The DDR3 controller maximizes memory bus efficiency via Look-Ahead command processing, bank management, auto-precharge and additive latency support. The core is DFI compatible and supports a range of interfaces to user logic.
The Rambus DDR3 PHY and DDR3 controller used together comprise a complete DDR3 memory interface subsystem. Alternatively, these cores can be licensed separately to be paired with 3rd-party DDR3 controller or PHY solutions.
|Protocol||Data Rate (Gbps)||Application|
|DDR3 (1.5V)||1600-2133||IoT, Edge|
|DDR3L (1.35V)||1600-1866||IoT, Edge|
FlexPhase per bit timing adjustment circuits deskew data and clock signals to improve signal integrity and simplify package and PCB system design.
ODT calibration enables higher data rates and superior DRAM device and module performance by establishing the optimal termination value to compensate for variations in process and operating conditions that degrade signal performance.