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DDR4 DIMM Chipset Delivering outstanding memory bandwidth and capacity Contact Us DDR4 Registering Clock Driver and Data Buffer Chips Providing industry-leading bandwidth and capacity for DDR4 RDIMMs, LRDIMMs and NVDIMMs. These DDR4 Registering Clock Driver (RCD) and Data Buffer (DB) chips enable DDR4-based servers to tackle advanced workloads and applications. Description Part Number Product Brief […]
The Rambus SPD Hub with Internal Temperature Sensor (SPD Hub) SPD5118-G1B enables DDR5 Registered DIMMs (RDIMMs), Load Reduced DIMMs (LRDIMMs), Non-Volatile memory DIMMs (NVDIMMs), Unbuffered DIMMs (UDIMMs) and Small-Outline DIMMs (SODIMMs).
The Rambus Temperature Sensor (TS) TS5110-G1B enables DDR5 Registered DIMMs (RDIMMs), Load Reduced DIMMs (LRDIMMs) and Non-Volatile memory DIMMs (NVDIMMs). Two TS are used per DIMM which along with the SPD Hub’s internal TS provide three points of thermal telemetry.
The first wave of DDR5-based servers sport RDIMMs running at 4800 megatransfers per second (MT/s). This is a 50% increase in data rate over top-end 3200 MT/s DDR4 RDIMMs in previous generation high-performance servers. DDR5 memory incorporates a number of innovations, including Decision Feedback Equalization (DFE) and a new DIMM architecture, which enable that speed […]
Innovative technology and related patents expand hybrid DRAM and Flash memory offerings SUNNYVALE, Calif. – Jan. 16, 2019 – Rambus Inc. (NASDAQ: RMBS), today announced it has acquired the assets of Diablo Technologies to broaden its portfolio in the hybrid DRAM and Flash memory markets, further establishing its position as an industry leader. These patented innovations augment […]
Annual revenue of $393.1 million, up 17% year over year; fourth quarter revenue of $101.9 million, up 4% year over year Fourth quarter GAAP diluted net loss per share of $0.29; fourth quarter non-GAAP diluted net income per share of $0.19 Annual royalty revenue of $289.6 million and licensing billings of $289.6 million; fourth quarter […]
Steven Woo, the vice president of systems and solutions and distinguished inventor in Rambus’ Office of the CTO, recently authored an article for Semiconductor Engineering that explores the data center in 2018 and beyond. As Woo observes, there are a number of trends that continue to challenge the design of conventional von Neumann architecture, including […]
Last month, Semiconductor Engineering’s Kevin Fogarty wrote an article that explores how major industry players are pushing the limits of DRAM. As Fogarty observes, the access bandwidth of DRAM-based computer memory has improved by a factor of 20x over the past two decades – with capacity increasing 128x during the same period. In contrast, latency […]
DDR5 Ann Steffora Mutschler recent penned an article for Semiconductor Engineering that explores the role of new memory technology in the evolving data center. For example, DDR5 is expected to offer significant improvements over previous iterations of DRAM, including doubling the bandwidth and density over DDR4, as well as facilitating optimized channel efficiency. Nevertheless, DDR5 […]
Rambus’ Aharon Etengoff recently penned an article for Semiconductor Engineering that explores how evolving data center demands are spurring the NVDIMM market. Indeed, a Transparency Market Research (TMR) report published in August confirms that the global Non-Volatile Dual In-line Memory Module (NVDIMM) market is being propelled by an increased demand for advanced data center infrastructure. […]