Rambus and Tezzaron Semiconductor have clinched an agreement to incorporate Rambus oxide-resistive memory (ReRAM) technology in upcoming Tezzaron devices.
According to Rambus Labs VP Gary Bronner, the architecture license grants Tezzaron access to system IP, specifications and validation suites to design differentiated chips using ReRAM.
“ReRAM is ideally suited to improve the power, performance and reliability requirements in military, aerospace and commercial memory applications. It fills the gap between what DRAM and Flash can provide while being highly reliable and high speed,” Bronner explained.
“Perhaps most importantly, collaboration with Tezzaron takes full advantage of this new technology by differentiating the memory architecture for numerous use cases across the embedded landscape.”
Indeed, Tezzaron plans to build ReRAM into storage-class 3D memory devices for military, aerospace and commercial applications. The first in Tezzaron’s family of ReRAM devices is currently in design and scheduled for production in 2016.
Tezzaron also plans to implement ReRAM in an assortment of SoCs, FPGAs and processors to exploit the extensive split-fab production experience of its fabrication subsidiary, Novati Technologies. More specifically, ReRAM will allow Novati to add hundreds of megabytes of storage to a logic device manufactured in a standard commercial fab.
In addition to military and aerospace applications, ReRAM technology can be utilized in a variety of embedded storage memory devices where low power, design integration, cost and performance are all important factors. Among these, the development of storage memory in connected devices is fast becoming critical.
“That is precisely why Rambus recently implemented a ReRAM partnership with researchers at Tsinghua University in Beijing, China,” Bronner added. “We want to help further develop RRAM technology so that it is ultimately suitable for both consumer devices as well as more demanding platforms and environments.”