
Rambus launches High Bandwidth Memory PHY on GLOBALFOUNDRIES 14nm LPP
Rambus has announced the availability of its High Bandwidth Memory (HBM) Gen2 PHY developed for the GLOBALFOUNDRIES FX-14TM ASIC Platform. Designed for systems that require low
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Rambus has announced the availability of its High Bandwidth Memory (HBM) Gen2 PHY developed for the GLOBALFOUNDRIES FX-14TM ASIC Platform. Designed for systems that require low
Last week at IDF 2016, Intel executive Geof Findley presented a comprehensive overview of the memory industry ecosystem. According to Findley, DDR4 is ramping quickly
Frank Ferro, a senior director of product management at Rambus, has penned an article for ChipEstimate about the future of DRAM in the age of the
Gary Hilson of the EE Times has covered Rambus’ recent announcement about the development of its R+ DDR4 PHY on GLOBALFOUNDRIES 14nm LPP process. As
Rambus has confirmed the development of its R+ DDR4 PHY on the GLOBALFOUNDRIES 14nm LPP process. “As part of a comprehensive suite of memory and
Frank Ferro, a senior director of product management at Rambus, recently sat down with Ed Sperling of Semiconductor Engineering and other industry participants to discuss