Rambus has officially confirmed that its R+™ DDR4/3 PHY was developed using Samsung’s 28nm LPP process.
“Our ongoing collaboration with Samsung has yielded a robust, production-ready R+ DDR4/3 PHY on the power-performance optimized 28nm Low Power Plus (LPP) process,” Loren Shalinsky, a Strategic Development Director at Rambus, explained.
“The Rambus design has been characterized at a system level and can be easily integrated into a SoC.”
According to Shalinsky, the R+ DDR4 multi-modal memory PHY allows customers to differentiate their respective products by offering optimized performance and full industry compatibility with DDR3 and DDR4 interfaces.
“The DDR4 IP product supports data rates ranging from 800 to 3200Mbps in a low-power process. Plus, it is available in both PoP and discrete packages,” he continued.
“Designed for server, compute, networking and consumer applications, R+ DDR4 PHY delivers versatile configuration options for both area/power optimized consumer applications and performance intensive compute applications.”
As Shalinsky notes, DDR4 only recently began shipping in 2014, with the memory initially targeting the server space and high-end enthusiasts motherboards.
“Nevertheless, DDR4 will become the memory of choice for virtually every non-mobile application within the next 2 years,” he added.
“That is precisely why our R+ PHY enables SoC vendors to integrate a PHY today – allowing the final system designer to choose between DDR3 or DDR4 technology.”