Rambus is attending the Samsung Foundry Forum at the Santa Clara Marriott on May 24th. The company will be showcasing its 56G SerDes PHY, which is being developed on Samsung’s 10nm LPP (Low-Power Plus) process technology.
As we’ve previously discussed on Rambus Press, our 56G SerDes PHY supports PAM-4 and NRZ signaling and data rates from 9.95Gbps to 58Gbps across copper and backplane channels with more than 35dB insertion loss. At the heart of the SerDes architecture is an ADC (analog to digital converter) operating at 28 GS/s that allows for adjustable power consumption and improved performance while providing low BER (Bit Error Rate) for enterprise class reliability.
Key product highlights include an analog Rx CTLE with combined 12 dB of peaking gain, digital Tx/Rx FFE and DFE, support for Ethernet auto negotiation and multiple lane configurations to facilitate flexible ASIC floorplan integration. The 56G MPS also offers BIST with PRBS generators and checkers, extensive debug capabilities and interfaces using an internal microprocessor, as well as LabStation™ software and scripts for enhanced bring-up and validation.
Additional features include support for up to 8 duplex Lanes and data rates in the range of 9.95 Gbps – 58 Gbps, RX front end with on-chip capacitors to support both AC-coupled and DC-coupled channels, configurable architecture that enables power saving models for low and medium loss channels, as well as a flexible ASIC interface for sharing impedance codes amongst multiple PMAs and reducing the number of external reference resistors for on-chip impedance calibration.
The 56G MPS also offers programmable TX/RX equalizers, a centralized LC-PLL that supports a wide range of reference clock frequencies and lane operating frequencies, differential reference clock inputs that are selectively sourced from dedicated pins or internal ASIC interface pins, direct register control for all PMA functions, as well as a flexible layout to support placement along all edges in an ASIC.